Type of Document	Dissertation
Author	Chen, Hang
Author's Email Address	gte391q@prism.gatech.edu
URN	etd-11282005-154426
Title	Modulation Effects on Organic Electronics
Degree	Doctor of Philosophy
Department	Chemistry and Biochemistry
Advisory Committee	Advisor Name Title Janata, Jiri Committee Chair Josowicz, Mira Committee Member Kippelen, Bernard Committee Member Lyon, Andrew Committee Member Zhang, John Z. Committee Member
Keywords	contact resistance field modulation organic field-effect transistor chemical effects organic electronics
Date of Defense	2005-11-21
Availability	unrestricted
Abstract A high aspect ratio epoxy mask has been built with Taiyo PSR4000BN on chemical sensing array chip. Thickness up to 200 m and aspect ratio up to 16:1 have been achieved with this material. It is demonstrated that this material satisfies the mechanical and chemical requirements. A three-electrode system has been designed and built for electrochemistry in micro-cell on chip. Tests with poly(phenylenesulfide-phenyleneamine) (PPSA) demonstrates that it is possible to precisely tune the properties (Work function and resistance) of conducting polymer that has been cast on chip surface. A new test platform GT03 has been fabricated and used to characterize the chemical effects on organic electronics. It is demonstrated that the chemical species in ambient environment can affect organic electronics properties on bulk, interface and electric contact. The contact resistance in organic field-effect transistors (OFETs) has been characterized with modified interdigitated structure (IDS). It is demonstrated that drain and source contact resistances can be calculated separately with modified four-point-probe measurements, and contact resistance and material bulk resistance are actually modulated by the gate electric field. Furthermore, the influence from oxygen doping in poly(3-hexylthiophene) (P3HT) based OFETs has been investigated. A new model of oxygen doping has been suggested and it is demonstrated that oxygen doping can affect all the resistance components in P3HT OFETs.
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